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Cutoff Frequency Record at 144 GHz PDF Print E-mail

100 nm Gate AlInN/GaN HEMTs Grown on SiC with FT = 144 GHz

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New support from the NCCR QP PDF Print E-mail

NOVAGAN got the support from the NCCR Quantum Photonics to develop new epiwafers designed for the fabrication of state-of-the-art laser diodes for medical and consumer applications.

 
GaN Power Electronics on silicon PDF Print E-mail

AlInN/GaN HEMTs have demonstrated a 102 GHz cut-off frequency on Silicon substrates.

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New support from FIT PDF Print E-mail

NOVAGAN has been allowed funding from the FIT foundation for the development of new laser diode prototypes.