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New Laser epiwafers available » New Laser epiwafers at 440 nm are now available.

Cutoff Frequency Record at 144 GHz » 100 nm Gate AlInN/GaN HEMTs Grown on SiC with FT = 144 GHz

New support from the NCCR QP » NOVAGAN got the support from the NCCR Quantum Photonics to develop new epiwafers designed for the fabrication of state-o...

GaN Power Electronics on silicon » AlInN/GaN HEMTs have demonstrated a 102 GHz cut-off frequency on Silicon substrates.

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New Laser epiwafers available

New Laser epiwafers at 440 nm are now available.

Cutoff Frequency Record at 144 GHz

100 nm Gate AlInN/GaN HEMTs Grown on SiC with F_T= 144 GHz
Read more...

New support from the NCCR QP

NOVAGAN got the support from the NCCR Quantum Photonics to develop new epiwafers designed for the fabrication of state-of-the-art laser diodes for medical and consumer applications.

GaN Power Electronics on silicon

AlInN/GaN HEMTs have demonstrated a 102 GHz cut-off frequency on Silicon substrates.
Read more...

New support from FIT

NOVAGAN has been allowed funding from the FIT foundation for the development of new laser diode prototypes.

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