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Supporting the most demanding optoelectronic and electronic products, NOVAGAN's development activities include self-funded, government-funded, customer-funded and third-party co-funded efforts. Many R&D activities, in particular those that are funded or co-funded by customers are subject to strictly controlled confidentiality procedures within NOVAGAN. |
AlInN for ElectronicsThe interest of AlInN HEMTs for high-power high-frequency applications relies on their high current drivability, low channel sheet resistances, and their high achievable transconductance ... Read more |
AlInN for PhotonicsAlInN layers with In=18% are equivalent, in terms of refractive index, to AlGaN layers with an Al content of 46% while being lattice-matched to GaN. The index contrast to GaN exceeds 8% ... Read more |




