The interest of AlInN HEMTs for high-power high-frequency applications relies on their high current drivability, low channel sheet resistances, and their high achievable transconductance values. AlInN allows new design with lattice-matched structures, ultra thin barriers and giant 2DEGs.

AlInN/GaN-based HEMTs have demonstrated high-power and high-temperature performance, constituting a new class of  lattice-matched and stress-free thermally and chemically stable devices with enhanced charge polarization.
The exceptional chemical stability of unstrained AlInN/GaN interface and surface have been demonstrated with successful device operation at 800°C.