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The unique property of AlInN is that it can be grown lattice matched to GaN, providing stress-free heterostructures with huge spontaneous polarization. Our AlInN/GaN HEMT epiwafers provide 2DEG with nS of 2.6x1013 cm-2, without strain, without cracks, potentially improving the stability of HEMT heterostructures. In those structures the absence of strain allows low channel sheet resistances (200 Ohm/sqr), and high transconductance with high current density.
 
Pinch-off "engineering"
As AlInN offers a larger space for customizations, our heterostructures can be completely designed by our customers in order to meet specific requirements for their applications. Lattice-matched AlInN allows pinch-off engineering with channel-current densities well above that obtained with AlGaN. Our standard heterostructures exhibit small pinch-off voltage (< 5V) with still a high sheet carrier density above 2x1013 cm-2.
Highly resistive GaN Template
AlInN heterostructures are available on highly resistive GaN templates on the most common substrates. For outstanding perfomances required for defense or telecommunications, we supply AlInN HEMT epiwafers on Semi-Insulating SiC substrates. We can also supply AlInN heterostructures on high resistivity silicon for cost-effective applications, and on sapphire substrates for sensors.
The thickness of our template ranges from 0.2 um to 2 um, depending on the best solution that fits with your application and process flow.
Leakage current of our GaN template is kept below 100 pA at 200 V and the resistivity is well above 10 MOhm. This guaranties the best performances for RF & microwave components and power devices, whatever the substrate used.
Thanks to the specific properties of AlInN, transistors based on this alloy are able to operate properly up to 800°C and in harsh environments. Typical device performances reported with our lattice-matched AlInN heterostructures are reported in the following table:
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