AlInN allows new design with lattice-matched HEMT structures and ultrathin barriers perfectly adapted for high frequency applications.
Unlike the commonly used AlGaN/GaN structures, there is no limitation due to the aspect ratio when using AlInN/GaN structures. Gate to channel distance below 10 nm can be used with AlInN barriers while typical AlGaN-barrier thicknesses are about 25 nm. This allows to obtain high transconductances (>300 mS/mm), low output conductances and high gain at mm-wave frequencies for sub 100 nm gate lengths.
Record cut-off frequency demonstrated with AlInN heterostructures
Gain cut-off frequencies reaching fT ? 150 GHz with 100 nm gate length have been demonstrated on semi-insulating SiC substrates with high-current density AlInN HEMTs. In this structure the peak transconductance can reach value in excess of GM = 480 mS/mm with a current density of 2 A/mm.
On high-resistivity silicon substrates the highest gain cut-off frequency fT achieved using AlInN is 114 GHz, with a transconductance GM = 335 mS/mm, and a current drive of 1.5 A/mm.
On sapphire substrates, AlInN allows a gain cut-off frequency fT of 75 GHz with 100 nm gate length.
Those results demonstrate the exceptional possibilities offered by AlInN for high frequency operation.
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100 nm Gate (Al,In)N/GaN HEMTs Grown on SiC with fT = 144 GHz, IEEE Device Letters 31, (2010)
102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz, IEEE Device Letters 30, 796 (2009)
Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation, IEEE Electron Device Letters 30, 1030 (2009)
Barrier-Layer Scaling of InAlN/GaN HEMTs, IEEE Electron Device Letters 29, 422 (2008)
AlInN/GaN a suitable HEMT device for extremely high power high frequency applications, Microwave Symposium, 2007. IEEE/MTT-S International