NOVAGAN supplies InGaN epilayers with all indium concentrations, even InN. We provide heterostructures designed for the fabrication of UV-visible laser diodes, LEDs, RCLEDs.
InGaN/GaN Quantum wells are available over a broad range of wavelengths from 370 to 560 nm.
Our advanced wafer growth facilities allow manufacturing devices with the most demanding design specifications, engineered with atomic layer precision. The typical on-wafer wavelength fluctuation is lower than 10 nm. Typical PL linewidth is around 15 nm at 450 nm.