After years of R&D NOVAGAN brings to its unique expertise in the epitaxy of AlInN heterostructures for electronic applications. We supply heterostructures designed for the next generation of RF and microwave power electronics, communication & radar, high-frequency power MMICs, high-voltage electronics and sensors.

The interest of AlInN HEMTs for high power high frequency applications relies on their high current drivability, low channel sheet resistances, and their high achievable transconductance values. AlInN allows new design with stress-free lattice-matched structures, ultra thin barriers and giant sheet charge densities. Being the pioneer in the fabrication of high quality AlInN epilayers we have the largest experience to grow AlInN alloys with the best properties.