GaN Electronics
100 nm Gate (Al,In)N/GaN HEMTs Grown on SiC with fT = 144 GHz, IEEE Device Letters 31, (2010)
102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz, IEEE Device Letters 30, 796 (2009)
Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation, IEEE Electron Device Letters 30, 1030 (2009)
Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure, Appl. Phys. Lett. 94, 121909 (2009)
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors, J. Appl. Phys. 106, 124503 (2009)
Status of the Emerging InAlN/GaN Power HEMT Technology, The Open Electrical and Electronic Engineering Journal, 2008, 2, 1
Barrier-Layer Scaling of InAlN/GaN HEMTs, IEEE Electron Device Letters 29, 422 (2008)
Thermal stability of 5 nm barrier InAlN/GaN HEMTs, Semiconductor Device Research Symposium, 2007 International
AlInN/GaN a suitable HEMT device for extremely high power high frequency applications, Microwave Symposium, 2007. IEEE/MTT-S International
High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures, Appl. Phys. Lett. 89, 062106 (2006)
GaN Photonics
High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells, Appl. Phys. Express 3, 061002 (2010)
Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers, Appl. Phys. Lett. 94, 193506 (2009)
Current status of AlInN layers lattice-matched to GaN for photonics and electronics, J. Phys. D: Appl. Phys, 40, 6328 (2007)
Crack-free fully epitaxial nitride microcavity using highly reflective AlInN/GaN Bragg mirrors, Appl. Phys. Lett. 86, 031107 (2005)
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