AlInN based HEMTs have demonstrated high power operation at high temperature, establishing a new class of lattice-matched and stress-free thermally and chemically stable devices.
The exceptional lyhigh chemical stability of unstrained AlInN/GaN heterostructures and their surface have been demonstrated with successful operation at 1000°C in vacuum with a current density above 600 mA/mm. After cooling the original output characteristics could be recovered, indicating no permanent degradation of the AlInN/GaN and the surface/metal interfaces. AlInN is the first semiconductor allowing transistor operating at such a high temperature.
Even with the smallest barrier thickness, the stability of the barrier layer and contact/barrier interfaces can tolerate high temperatures. This should translate into high reliability and robustness under very high power operation.
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Status of the Emerging InAlN/GaN Power HEMT Technology, The Open Electrical and Electronic Engineering Journal, 2008, 2, 1
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors, J. Appl. Phys. 106, 124503 (2009)
Thermal stability of 5 nm barrier InAlN/GaN HEMTs, Semiconductor Device Research Symposium, 2007 International