Latest News:
| GaN Power Electronics on silicon |
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| Monday, 13 July 2009 01:00 |
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AlInN/GaN HEMTs have demonstrated a 102 GHz cut-off frequency on Silicon substrates. More details in the publication: 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz |