New support from the NCCR QP » NOVAGAN got the support from the NCCR Quantum Photonics to develop new epiwafers designed for the fabrication of state-o...
|GaN Power Electronics on silicon|
|Monday, 13 July 2009 01:00|
AlInN/GaN HEMTs have demonstrated a 102 GHz cut-off frequency on Silicon substrates.
More details in the publication: 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz