NOVAGAN offers processing service for the fabrication of optoelectronic devices based on III-nitride alloys. LED and laser diode processing flows are well mastered on sapphire and GaN substrates.

Our production clean rooms host state-of-the-art control and characterization equipments required to establish solid process baselines in order to ensure high-quality and reproducible production.




Wafer processing capabilities are:

•  Contact Lithography:1.0 micron
•  RIE Dielectric Etch: Oxide / Nitride / Oxynitride / SOG / Si
•  ICP/RIE Semiconductor Etch: AlGaInN
•  PECVD Deposition: Oxide / Nitride / Oxynitride
•  E-beam Deposition for dielectrics: SiO₂, ZrO₂, Ta₂O₅, ...
•  Metallization: Au, Al, Pt, Ti, Ni, & Pd
•  Rapid thermal anneal (RTA)
•  Anti-Reflection & Highly Reflective Coatings
•  On-wafer parametric tests