Our high quality AlGaN crack-free layers are used for applications in optoelectronic and electronic which require a perfect thickness and composition uniformity. Our heterostructures are used for the fabrication of ultraviolet LEDs, photodetectors, sensors and transistors.

Bulk AlGaN epilayers

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We provide thick AlGaN templates and AlGaN based heterostructures with all aluminum contents, from GaN to AlN. Epilayers are available on sapphire, SiC, Silicon and GaN substrates.

AlGaN Quantum wells

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We provide GaN/AlGaN quantum wells having state-of-the-art properties such as emission linewidth of 25 meV at RT. Our standard quantum wells are based on AlGaN alloys with an Al concentration between 5 and 30%.