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Latest News:
New Laser epiwafers available
»
New Laser epiwafers at 440 nm are now available.
Cutoff Frequency Record at 144 GHz
»
100 nm Gate AlInN/GaN HEMTs Grown on SiC with FT = 144 GHz
New support from the NCCR QP
»
NOVAGAN got the support from the NCCR Quantum Photonics to develop new epiwafers designed for the fabrication of state-o...
GaN Power Electronics on silicon
»
AlInN/GaN HEMTs have demonstrated a 102 GHz cut-off frequency on Silicon substrates.
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NOVAGAN sàrl
Headquarters
Chemin de Mornex 5
CH-1003 Lausanne
Switzerland
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0041 76 328 47 00
0041 21 544 12 67
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Latest News
New Laser epiwafers available
Cutoff Frequency Record at 144 GHz
New support from the NCCR QP
GaN Power Electronics on silicon
New support from FIT
