The thermal stability of 3 nm barrier thickness InAlN/GaN devices has been demonstrated up to 1000 °C.

InAlN/GaN-based HEMTs have demonstrated high-power and high-temperature performance, constituting a new class of lattice-matched and stress-free thermally and chemically stable devices with enhanced polarization.

The exceptional high chemical stability of unstrained AlInN/GaN heterostructure and its surface has been demonstrated with successful operation at 1000 °C in vacuum. More than 600 mA/mm have been measured. Pinch-off had been degraded due to buffer layer leakage caused by deep level activation. After cooling the original output characteristics could be recovered, indicating no permanent degradation. To our knowledge AlInN is the first semiconductor allowing transistor operating at this temperature.

No degradation of the InAlN/GaN interface toward the GaN buffer and the surface metals occurred at temperatures up to 1000 ◦C, which is promising for highly reliable ultrashort and ultrahigh frequency GaN-based devices. Even at the smallest barrier thickness, the stability of the barrier layer and contact/barrier-layer interfaces can tolerate high processing temperatures up to 1000 ◦C, promising potentially high robustness of these ultrathin barrier devices.

We provide heterostructures designed for the fabrication of UV-visible laser diodes, LEDs, RCLEDs, photodetectors, sensors and transistors.

We developed highly resistive template for high end electronic applications on the most common substrates: sapphire, Si(111) and SiC.

Typical template thickness, ranging from 0.2 μm to 2 μm, allow finding the best solution that fits with your application and process flow.

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