We use state-of-the-art equipments dedicated to III-Nitrides Epitaxy compatible with 2″, 3″ and 4″ wafers

 

 

2

Minimum Pattern Size

500

Alignement Precision

10

Maximum Device Size

LED structures covering the full visible spectrum: blue, green and red

Lattice-matched
AlInN/GaN DBRs
Microcavity
RCLEDs
VCSELs

AlGaN
Crack-free
Perfect surface
Low defect density

Lattice-matched
AlInN/GaN DBRs
Microcavity
RCLEDs
VCSELs

AlGaN
Crack-free
Perfect surface
Low defect density

Lattice-matched
AlInN/GaN DBRs
Microcavity
RCLEDs
VCSELs

AlGaN
Crack-free
Perfect surface
Low defect density

Laser diode wafers for UV, blue and cyan

The Future Is Now

In order to respond to the future requirements of optoelectronic devices we are developing a mass-transfer process which is compatible with the fabrication of microLED matrices.

The process will offer dramatic cost reduction by allowing substrate recycling.

Mass-transfer process for microLED and LED matrix